1) Low density.
2) Tete'e a'a.
3) La'ei tete'e.
4) Tete'e fa'ama'i.
5) Abrasion tetee.
6) Tete'e fa'avevela lelei (ona o le maualalo o le fa'alauteleina o le vevela ma le maualuga o le fa'aogaina o le vevela).
7) Malosi Sili ile vevela maualuga.
8) Puleaina lelei o foliga lavelave.
La'ei mea Fa'asao: Silicon carbide plate, Silicon carbide piliki, Pipe lining, Pipe Cone, afa, ma isi.
Meaafale umu: Plate, Beam, Roller, Burner Nozzle, Round beam, sikuea sikuea, pu.Crucible, Sagger, etc.
Isi: Fa'asufu fa'asufu
Fa'aaogāga ole Reaction Bonded Silicon Carbide:
Reaction bonded silicon carbide ua faʻamaonia e avea o se filifiliga sili ona lelei mo le faʻaogaina o mea e pei o paipa paipa, Nozzles, faʻafefe o le tafe ma vaega lapopoa o laʻei i le maina faʻapea foi ma isi pisinisi.
Meatotino | Iunite | SiSiC/RBSIC |
Tele tele (SiC) | V01% | ≥85 |
Fa'atosina tele | g/cm3 | 3.01 |
E aliali mai le porosity | % | <0.1 |
Modulus o le malepelepe ile 20℃ | Mpa | 250 |
Modulus o le malepelepe ile 1200℃ | Mpa | 280 |
Modulus o elasticity i le 20 ℃ | Gpa | 330 |
Malosi gau | Mpa*m1/2 | 3.3 |
Conductivity vevela ile 1200℃ | wm-1.k-1 | 45 |
Fa'alauteleina le vevela ile 1200℃ | a×10-6/℃ | 4.5 |
Tete'e te'i vevela ile 1200℃ | Lelei tele | |
Coefficient o le vevela vevela | <0.9 | |
Max.working vevela | ℃ | 1350 |
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Afai e te fia iloa nisi faʻamatalaga o oloa, faʻafeiloaʻi e faʻafesoʻotaʻi i matou ma o le a matou tuʻuina atu ia te oe le oloa sili ona talafeagai ma auaunaga sili!